STACKED QUANTUM DOT SENSORS AND METHODS OF FORMING THE SAME

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United States of America

APP PUB NO 20250113641A1
SERIAL NO

18896467

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Abstract

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A method of forming a stacked image sensor comprises providing a first substrate and a second substrate. The first substrate comprises a first matrix comprising first quantum dots, a first dielectric layer adjacent to the first matrix, and first bond pads disposed in the first dielectric layer. The second substrate comprises a second matrix comprising second quantum dots, a second dielectric layer adjacent to the second matrix, and second bond pads disposed in the second dielectric layer. The method includes hybrid bonding the first substrate to the second substrate without use of an intervening adhesive to form the stacked image sensor, where the hybrid bonding connects the first bond pads to the second bond pads.

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Patent Owner(s)

Patent OwnerAddress
ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC3025 ORCHARD PARKWAY SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haba, Belgacem Saratoga, US 769 23924
Katkar, Rajesh Milpitas, US 274 7233
Uzoh, Cyprian Emeka San Jose, US 382 12692
Zhao, Oliver Daly City, US 11 178

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