HIGH EFFICIENCY QUANTUM DOT IMAGE SENSORS AND METHODS OF FORMING THE SAME

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United States of America

APP PUB NO 20250113627A1
SERIAL NO

18543862

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Abstract

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An image sensor using quantum dots is formed that improves collection of photogenerated carrier using a conductive matrix, a semiconductive matrix, a matrix comprising conductive particles and quantum dots in a transparent non-conductive material, conductive structures, and/or porous conductive structures. Hybrid bonding of the image sensor to an image processor device is performed without use of an intervening adhesive to connect the image sensor to the image processor device.

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Patent Owner(s)

Patent OwnerAddress
ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC3025 ORCHARD PARKWAY SAN JOSE CA 95134

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Haba, Belgacem Saratoga, US 769 23924
Katkar, Rajesh Milpitas, US 274 7233
Uzoh, Cyprian Emeka San Jose, US 382 12692
Zhao, Oliver Daly City, US 11 178

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