THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME, AND DISPLAY PANEL
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 3, 2025
app pub date -
Sep 26, 2022
filing date -
Sep 26, 2022
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Provided is a thin-film transistor. The thin-film transistor includes: a gate, a first insulative layer, a semiconductor layer, a source and drain layer, a semiconductor modification layer, and a second insulative layer that are disposed on a base substrate and sequentially laminated in a direction away from the base substrate; wherein the source and drain layer includes a source and a drain that are spaced apart and both connected to the semiconductor layer, a portion of the semiconductor layer is exposed from a gap between the source and the drain, and the semiconductor modification layer at least covers the portion of the semiconductor layer exposed from the gap; and a concentration of hydrogen in the semiconductor layer is greater than a concentration threshold, and a temperature of a reaction chamber in manufacturing the thin-film transistor is less than a temperature threshold.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully