FINS FOR METAL OXIDE SEMICONDUCTOR DEVICE STRUCTURES
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Dec 12, 2024
filing date -
Dec 12, 2024
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Abstract
Methods are disclosed for forming fins in transistors. In one embodiment, a method of fabricating a device includes forming silicon fins on a substrate and forming a dielectric layer on the substrate and adjacent to the silicon fins such that an upper region of each silicon fin is exposed. Germanium may then be epitaxially grown germanium on the upper regions of the silicon fins to form germanium fins.
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