MANUFACTURING METHOD AND POWER SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Jan 30, 2023
filing date -
Jan 30, 2023
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Abstract
A method for producing a power semiconductor device comprises providing a semiconductor body based on SiC, irradiating at least a first portion of a top side of the semiconductor body with low-energy electron radiation, and producing an electrical insulation layer at least in the at least one irradiated first portion.
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