FIELD-EFFECT TRANSISTOR CRESCENT-SHAPED DIELECTRIC ISOLATION
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Sep 29, 2023
filing date -
Sep 29, 2023
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Abstract
A semiconductor structure, system, and method of forming a crescent-shaped dielectric isolation layer for stacked field-effect transistors (FETs). The semiconductor structure may include a transistor including an epi. The semiconductor may also include a substrate, where the epi is directly connected to the substrate. The semiconductor may also include an isolation layer directly connected to the epi and the substrate. The system may include a semiconductor structure. The method may include forming an isolation layer directly connected to a substrate. The method may also include forming a first transistor, where forming the first transistor includes growing a first epi, where the first epi is directly connected to the isolation layer and the substrate.
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