Importance

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Abstract

Disclosed are a semiconductor structure and a manufacturing method therefor. The semiconductor structure includes an N-type substrate provided with a plurality of first grooves on a first surface; and an epitaxial layer located on the first surface, where the epitaxial layer includes an N-type drift region, a P-type well region, an N-type source region and a JFET region, where a surface of a side, away from the N-type substrate, of the epitaxial layer is provided with a plurality of second grooves, the second grooves are in one-to-one correspondence with the first grooves, and extension directions of the second grooves and the first grooves are parallel to a length direction of a channel of the semiconductor structure. A channel width may be effectively increased, thereby increasing a channel conduction area and reducing channel resistance and interface state density; and the epitaxial layer may be prevented from being damaged by etching.

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First Claim