FIELD EFFECT TRANSISTOR WITH RECRYSTALLIZED SOURCE/DRAINS AND METHOD
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Jan 4, 2024
filing date -
Jan 4, 2024
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Abstract
A method includes: forming a stack of nanostructures over a substrate; forming a source/drain opening adjacent the stack of nanostructures; forming a semiconductor layer in the source/drain opening; forming an amorphous semiconductor layer by performing an ion implantation on the semiconductor layer; and forming a recrystallized source/drain by annealing the amorphous semiconductor layer.
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