Importance

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Abstract

A method of forming a semiconductor includes forming a superjunction structure comprising a plurality of superjunction columns that alternate in conductivity type along a lateral direction of the semiconductor substrate; and forming a plurality of transistor cells in an active area of the semiconductor substrate, each of the transistor cells being configured to control a vertical current flowing through superjunction structure, wherein forming the transistor cells includes forming source regions and body regions below the source regions; wherein forming the body regions includes forming a body layer extending from a main surface of the semiconductor substrate, wherein a dopant profile of second conductivity type dopants in the body layer increases moving from the main surface into the semiconductor substrate until it reaches a maximum at first depth from the main surface, and wherein the first depth is below a bottom depth of the source regions.

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First Claim