ONE-STEP FRONT OHMIC AND SCHOTTKY CONTACT FORAMTION ON SIC POWER DEVICES WITH LASER ANNEALING
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Oct 3, 2023
filing date -
Oct 3, 2023
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Abstract
Methods, systems, and apparatuses for one step formation of ohmic contacts and Schottky contacts for SiC power devices by using laser annealing are provided. An SiC power device may include a back-side ohmic contact, a n+ substrate, a n− epitaxial layer, one or more p+ regions, one or more carbon layers, one or more ohmic contacts, and a Schottky contact. The one or more ohmic contacts and Schottky contact may be formed in a one step operation that may include laser annealing. During manufacturing, a metallization layer applied above the carbon layers and n-epitaxial layer may form the ohmic contacts and Schottky contacts when the annealing is performed.
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