THREE-DIMENSIONAL MEMORY DEVICE CONTAINING PHOSPHORUS-DOPED SILICON OXIDE ION-GETTERING STRUCTURES AND METHODS OF FORMING THE SAME
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Oct 2, 2023
filing date -
Oct 2, 2023
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Abstract
A three-dimensional memory device includes a pair of alternating stacks of insulating layers and electrically conductive layers, where the pair of alternating stacks are laterally spaced from each other by a lateral isolation trench, memory openings vertically extending through a respective alternating stack of the pair of alternating stacks, memory opening fill structures located in a respective one of the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a lateral isolation trench fill structure located in the lateral isolation trench. Phosphorus-doped silicon oxide portions are located within or on sidewalls of the lateral isolation trench at levels of the insulating layers.
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