GATE VOLTAGE BOOTSTRAP SWITCHING CIRCUIT

Number of patents in Portfolio can not be more than 2000

United States of America

APP PUB NO 20250112635A1
SERIAL NO

18981567

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A gate voltage bootstrap switching circuit includes an LDO, a first MOS transistor, a second MOS transistor, a third MOS transistor, and a voltage control unit. The LDO has an inverting input terminal of connected to its output terminal. Drain of the first MOS transistor and source of the third MOS transistor are connected to the output terminal, source of the first MOS transistor is connected to drain of the second MOS transistor, and source of the second MOS transistor is connected to drain of the third MOS transistor. Capacitor arrays are connected. The voltage control unit is connected to gates of the first, second, and third MOS transistors to input an external power supply voltage as a gate-source voltage to the MOS transistors. The circuit eliminates the non-linearity of the impedance of the switch MOS transistors and improves the conversion speed of the ADC.

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Patent Owner(s)

Patent OwnerAddress
IPGOAL MICROELECTRONICS (SICHUAN) CO LTD801 901 AND 902 BUILDING 1 NO 33 JITAI ROAD HIGH TECH ZONE CHENGDU SICHUAN 610041 CHENGDU CITY SICHUAN PROVINCE 610041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Guo, Xiangyang Chengdu, CN 13 24
Wang, Lun Chengdu, CN 26 48

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