SEMICONDUCTOR STRUCTURE WITH ELECTROMAGNETIC INTERFERENCE IMMUNITY
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United States of America
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Apr 3, 2025
app pub date -
Mar 26, 2024
filing date -
Mar 26, 2024
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Abstract
The present disclosure describes a structure that includes an electromagnetic interference (EMI) immunity layer and a doped epitaxial layer on the EMI immunity layer. The EMI immunity layer has a first resistivity and a first thickness. The doped epitaxial layer has a second resistivity and a second thickness. A sum of thicknesses is defined by a combination of the first thickness and the second thickness. A first ratio is the sum of the first thicknesses to the second thickness. A second ratio is the second resistivity to the first resistivity. A product of the first ratio and the second ratio is equal to or less than about 1.
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