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Abstract

In examples, a power device comprises a first wide bandgap semiconductor die including a high-side transistor; a second wide bandgap semiconductor die including a low-side transistor; and a conductive device coupled to the first and second wide bandgap semiconductor dies. The conductive device comprises a first layer including a first metal member having fingers at first and second ends of the first metal member, a second metal member having fingers interleaved with fingers of the first metal member at the first end, and a third metal member having fingers interleaved with fingers of the first metal member at the second end. The conductive device also comprises multiple layers in vertical alignment with the first layer, the first, second, and third metal members extending through the multiple layers. The conductive device also comprises a dielectric material covering the first layer and the multiple layers. The power device comprises a connection layer coupling the conductive device to each of the first and second wide bandgap semiconductor dies, with the connection layer including the first, second, and third metal members, and with the first metal member having connection layer fingers at the first and second ends of the first metal member. The second metal member has connection layer fingers interleaved with connection layer fingers of the first metal member at the first end, and the third metal member has connection layer fingers interleaved with connection layer fingers of the first metal member at the second end.

First Claim