ACTIVE PRIME REGION WITH CONDUCTIVE BYPASS
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Sep 28, 2023
filing date -
Sep 28, 2023
priority date (Note) -
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Abstract
A semiconductor device includes a prime active region and a barrier region within the active prime region to define a barrier across a depth of the active prime region. A bypass structure includes a contact connecting to a component within the active prime region and extending outside the active prime region, a metal layer connecting to the first contact outside the active prime region and a through via passing through the depth of the active prime region and connecting to a solder bump.
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