Method Of Forming A Metal Liner For Interconnect Structures
Number of patents in Portfolio can not be more than 2000
United States of America
Stats
-
N/A
Issued Date -
Apr 3, 2025
app pub date -
Dec 12, 2024
filing date -
Dec 12, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Methods of forming devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. A self-assembled monolayer (SAM) is formed on the bottom of the gap, and a barrier layer is formed on the SAM before selectively depositing a metal liner on the barrier layer. The SAM is removed after selectively depositing the metal liner on the barrier layer.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully