MANUFACTURING METHOD OF CMOS ACOUSTIC PRESSURE SENSOR
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United States of America
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Apr 3, 2025
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Sep 20, 2024
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Sep 20, 2024
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Abstract
This invention discloses a method for manufacturing a CMOS acoustic pressure sensor. After completing the CMOS process, a cavity is etched into the substrate of the CMOS wafer, and then the oxide insulation structure on the front side of the CMOS wafer is removed, thereby completing the fabrication of the CMOS acoustic pressure sensor.
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