DRY DEVELOPMENT OF RESISTS
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Dec 13, 2024
filing date -
Dec 13, 2024
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Abstract
Dry development of resists can be useful, for example, to form a patterning mask in the context of high-resolution patterning. Dry development may be advantageously accomplished by a method of processing a semiconductor substrate including providing in a process chamber a photopatterned resist on a substrate layer on a semiconductor substrate, and dry developing the photopatterned resist by removing either an exposed portion or an unexposed portion of the resist by a dry development process comprising exposure to a chemical compound to form a resist mask. The resist may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film EUV resist.
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