MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Dec 12, 2024
filing date -
Dec 12, 2024
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Abstract
A method of manufacturing a semiconductor device includes bonding a first wafer with a second wafer. The second wafer includes a substrate, an isolation structure in the substrate, a transistor on the substrate, and a interconnect structure over the second transistor. A first etching process is performed to form a first via opening and a second via opening in the substrate. The second via opening extends to the isolation structure, and the second via opening is deeper than the first via opening. A second etching process is performed such that the first via opening exposes the substrate. A third etching process is performed such that the first via opening and the second via opening exposes the interconnect structure, and the second via opening penetrates the isolation structure. A first via is formed in the first via opening and a second via is formed in the second via opening.
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