METHOD OF FORMING CARBON-CONTAINING FILM
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United States of America
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Apr 3, 2025
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Dec 13, 2024
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Dec 13, 2024
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Abstract
A method of forming a carbon-containing film having a high etching resistance and a low stress is provided. The method of forming a carbon-containing film includes a first step of forming a first carbon-containing film on a substrate, and a second step of reforming a surface layer of the first carbon-containing film. The first carbon-containing film formed in the first step has a first film stress. The first carbon-containing film reformed in the second step has a second film stress. A difference between the first film stress and the second film stress is ±100 MPa or less.
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