HYBRID SEMICONDUCTOR WAFER AND METHOD OF FORMING
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United States of America
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Issued Date -
Apr 3, 2025
app pub date -
Jan 2, 2024
filing date -
Jan 2, 2024
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Abstract
A method includes performing a pressing operation on a volume of silicon carbide (SiC) powder to form a polycrystalline SiC (poly-SiC) ingot, and divide the poly-SiC ingot into a plurality of poly-SiC wafer bases. The method further includes, for a respective poly-SiC wafer base, bonding a silicon (Si) wafer structure to the respective poly-SiC wafer base to define a hybrid Si/poly-SiC stack structure, and performing a dividing process to remove a partial thickness of the Si wafer structure from the hybrid Si/poly-SiC stack structure to provide a hybrid Si/poly-SiC wafer comprising a remaining portion of the Si wafer structure bonded to the respective poly-SiC wafer base.
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