EMBEDDED SiGe OPTICAL WAVEGUIDE WITH LOW DEFECTIVITY
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United States of America
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Apr 3, 2025
app pub date -
Sep 28, 2023
filing date -
Sep 28, 2023
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Abstract
Devices and/or methods of fabrication facilitating suppression of embedded SiGe optical waveguides with low defectivity are provided. In an embodiment, a device can comprise a substrate comprising a trench within the substrate, wherein the trench comprises a base surface and sidewalls comprising the substrate; and a fully strained silicon-germanium (SiGe) structure located within the trench, wherein a bottom surface of the SiGe structure is in contact with the base surface, wherein side surfaces of the SiGe structure are in contact with the sidewalls, and wherein the SiGe structure is at least twice the critical thickness.
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