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United States of America Patent

APP PUB NO 20250107215A1
SERIAL NO

18472427

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure relates to an integrated chip. The integrated chip includes a first capacitor conductor disposed over an isolation structure arranged within a substrate. The isolation structure laterally extends past opposing outer sidewalls of the first capacitor conductor. A capacitor dielectric is arranged along one of the opposing outer sidewalls of the first capacitor conductor and over a top surface of the first capacitor conductor. A second capacitor conductor is arranged along an outer sidewall of the capacitor dielectric and over a top surface of the capacitor dielectric. The second capacitor conductor laterally overlaps parts of both the capacitor dielectric and the first capacitor conductor.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTDNO 8 LI-HSIN RD VI HSINCHU SCIENCE PARK HSINCHU 300

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Fei-Yun Hinchu, TW 25 39
Chen, Yi-Huan Hsin Chu City, TW 65 94
Chen, Ying-Chou Taichung City, TW 11 38
Chou, Chien-Chih Taipei City, TW 90 310
Ciou, Yi-Kai Taoyuan City, TW 6 0
Jong, Yu-Chang Hsinchu City, TW 62 330
Lin, Chi-Te Hsinchu City, TW 9 19
Song, Jhu-Min Nantou City, TW 23 4

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