SEMICONDUCTOR DEVICE INCLUDING NOBLE METAL TWO-DIMENSIONAL MATERIAL
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United States of America Patent
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Mar 27, 2025
app pub date -
Sep 26, 2024
filing date -
Sep 26, 2024
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Abstract
A semiconductor device may include a channel layer including a channel region, a source region, and a drain region, the source region and the drain region being on both sides of the channel region, respectively; a source electrode connected to the source region, a drain electrode connected to the drain region, and a gate electrode on the channel region. The channel region may include a first two-dimensional material layer including a noble metal-based two-dimensional semiconductor material and a second two-dimensional material layer including a two-dimensional semiconductor material different from the first two-dimensional material layer.
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