SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Feb 15, 2024
filing date -
Feb 15, 2024
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Abstract
The semiconductor device includes a substrate, an epitaxial layer and a transistor structure. The substrate is a hexagonal crystal structure and has a top surface perpendicular to a c-axis. The top surface of the substrate includes a lattice plane that is parallel to the c-axis, in which the lattice plane is etched by using a developed photoresist, and an included angle between the top surface of the developed photoresist and the substrate is in a range from 30 degree to 60 degree. The epitaxial axis is located on the lattice plane. The transistor structure is located in the epitaxial layer, on the epitaxial layer and on a surface facing away from the epitaxial layer.
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