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Abstract

A complementary field-effect transistor (CFET) device includes: a fin; first channel regions disposed vertically over the fin; second channel regions disposed vertically over the first channel regions; an isolation structure between the first and the second channel regions; a first etch stop layer (ESL) on a lower surface of the isolation structure; a second ESL on an upper surface of the isolation structure, where the first ESL, the second ESL, the first channel regions, and the second channel regions are a same semiconductor material; first source/drain regions at opposing ends of the first channel regions; second source/drain regions at opposing ends of the second channel regions; dielectric structures at opposing ends of the isolation structure and disposed vertically between the first and the second source/drain regions; a first gate structure around the first channel regions; and a second gate structure around the second channel regions.

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First Claim