RECESSED REGIONS OF A JUNCTION TERMINATION EXTENSION FOR SEMICONDUCTOR DEVICES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2025
app pub date -
Sep 27, 2024
filing date -
Sep 27, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
The present disclosure presents a semiconductor device including a semiconductor body, and the semiconductor body includes one or more recessed regions in a P doped Junction Termination Extension (JTE) region, and a depth of the recessed regions is smaller than a depth of the JTE region, and an N+ implant at a bottom of the recessed regions. A method of manufacturing such a semiconductor device is also presented.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully