SEMICONDUCTOR DEVICE
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Dec 9, 2024
filing date -
Dec 9, 2024
priority date (Note) -
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Abstract
A semiconductor device includes a semiconductor layer made of SiC. A transistor element having an impurity region is formed in a front surface portion of the semiconductor layer. A first contact wiring is formed on a back surface portion of the semiconductor layer, and defines one electrode electrically connected to the transistor element. The first contact wiring has a first wiring layer forming an ohmic contact with the semiconductor layer without a silicide contact and a second wiring layer formed on the first wiring layer and having a resistivity lower than that of the first wiring layer.
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