Semiconductor device and method of manufacturing the same
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Sep 19, 2024
filing date -
Sep 19, 2024
priority date (Note) -
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Abstract
A semiconductor device comprises an epitaxial layer, a first trench, a first field plate, a first trench gate, a first planar gate, and a first conductive connection portion. The first trench is disposed in the epitaxial layer and extends along a first direction. The first field plate is disposed in the first trench and extends along the first direction. The first trench gate is disposed in the first trench and extends along the first direction, where the first trench gate is laterally separated from the first field plate. The first planar gate is disposed on the first field plate and the first trench gate. The first conductive connection portion is disposed in the first trench and located between the first trench gate and the first planar gate, and the first trench gate is electrically connected to the first planar gate through the first conductive connection portion.
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