FORMING A SCHOTTKY CONTACT IN AN ELECTRONIC DEVICE, SUCH AS A JBS OR MPS DIODE, AND ELECTRONIC DEVICE WITH SCHOTTKY CONTACT
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Sep 18, 2024
filing date -
Sep 18, 2024
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Abstract
Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.
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