MEMORY DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2025
app pub date -
Feb 19, 2024
filing date -
Feb 19, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
A memory device may include a gate electrode, a channel layer spaced apart from the gate electrode, a charge trap layer between the gate electrode and the channel layer, and a two-dimensional material layer arranged between the charge trap layer and the gate electrode. The two-dimensional material layer may include a material having an electron affinity of less than 1 eV.
First Claim
Family
International Classification(s)
- No Non-US Classification to display
Cited Art Landscape
Patent Citation Ranking
- Citation Ranking not provided
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully