SEMICONDUCTOR MEMORY DEVICE AND PRODUCTION METHOD THEREOF

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United States of America Patent

APP PUB NO 20250107095A1
SERIAL NO

18976999

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Abstract

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A method of producing a semiconductor memory device includes, when three directions crossing each other are set to first, second, and third directions, respectively, laminating a plurality of first laminates and a plurality of second laminates on a semiconductor substrate in the third direction. The method further includes forming ends of the plurality of first laminates in shapes of steps extending in the first direction, and forming ends of the plurality of second laminates in shapes of steps extending in both directions of the first direction and the second direction.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO 108-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
IGUCHI, Tadashi Yokkaichi, JP 76 572
ISHIDUKI, Megumi Yokkaichi, JP 112 5432
KATO, Hisashi Mie, JP 113 850
KAWAI, Murato Yokkaichi, JP 19 87
MATSUDA, Toru Yokkaichi, JP 63 951

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