INTEGRATED ASSEMBLIES HAVING ONE OR MORE MODIFYING SUBSTANCES DISTRIBUTED WITHIN SEMICONDUCTOR MATERIAL, AND METHODS OF FORMING INTEGRATED ASSEMBLIES
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2025
app pub date -
Nov 6, 2024
filing date -
Nov 6, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully