SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING THE SEMICONDUCTOR DEVICE

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United States of America Patent

APP PUB NO 20250107084A1
SERIAL NO

18592052

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Abstract

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The present technology relates to a semiconductor device, a method of manufacturing the same, and a method of operating the same. The semiconductor device includes a gate stack including first interlayer insulating layers and word line stack layers alternately stacked, a vertical channel structure extending in a vertical direction in the gate stack, and memory structures interposed between the word line stack layers and the vertical channel structure, each of the word line stack layers includes an even conductive layer, a second interlayer insulating layer, and an odd conductive layer sequentially stacked, and a thickness of any one of the first interlayer insulating layers is greater than a thickness of any one of the second interlayer insulating layers.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
JUNG, Sung Wook Icheon-si Gyeonggi-do, KR 59 295

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