ACOUSTIC WAVE DEVICE
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Dec 11, 2024
filing date -
Dec 11, 2024
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Abstract
An acoustic wave device includes a support substrate a silicon oxide layer on the support substrate, a lithium niobate layer on the silicon oxide layer, and an IDT electrode on the lithium niobate layer. When a wavelength of the IDT electrode is denoted as λ, a thickness of the silicon oxide layer is more than or equal to about 0λ. Values of TIDT, ρ, duty, LNcut, TLN, and TSiO2 are within ranges that enable BW derived from Formula 1 to be about 12% or less and ksaw2 derived from Formula 2 to be about 0.1% or less.
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