Importance

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Abstract

A semiconductor device has an interconnect substrate and a plurality of conductive pads formed over a first surface of the interconnect substrate. The conductive pads have a fine pitch. An insulating layer is formed over the conductive pads. The insulating layer is formed over a side surface and a top surface of the conductive pads. An electrical component is disposed over the first surface of the interconnect substrate. The electrical component has an interconnect structure making electrical connection to the conductive pads through the insulating layer while leaving a portion of the insulating layer over a side surface of the interconnect structure. The interconnect structure breaks through the insulating layer under force and pressure by TCB to leave the portion of the insulating layer over the side surface of the interconnect structure to avoid an electrical short between the conductive pads.

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First Claim