RADIO FREQUENCY INDUCTOR
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Sep 22, 2023
filing date -
Sep 22, 2023
priority date (Note) -
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Abstract
An interconnect structure is formed, including a plurality of patterned metallization layers spaced apart by dielectric material on the semiconductor wafer. A radio frequency (RF) inductor device is formed on the interconnect structure. To this end, a copper inductor coil is formed on the interconnect structure by plating. The plated copper inductor coil is textured copper having at least 90% (111) orientation. The plated copper inductor coil is electrically connected with at least one patterned metallization layer of the interconnect structure. Upper domes may be formed on turns of the plated copper inductor coil.
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