METHODS AND STRUCTURES FOR IMPROVING ETCH PROFILE OF UNDERLYING LAYERS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2025
app pub date -
Sep 26, 2023
filing date -
Sep 26, 2023
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
Semiconductor devices and corresponding methods of manufacture are disclosed. The method may include forming a first hardmask layer over a substrate. The method may include forming a second hardmask layer over the first hardmask layer. The method may include transferring a pattern from the second hardmask layer to the first hardmask layer, wherein the pattern in the first hardmask layer comprises a plurality of protruding structures, and each of the plurality of protruding structures has respective portions of its two sidewalls extending toward each other. The method may include depositing a modification layer extending along at least the respective portions of the sidewalls of each of the protruding structures. The method may include etching the substrate with the protruding structures and the modification layer both serving as a mask.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully