NON-VOLATILE MEMORY SYSTEM AND DATA RECOVER READ OPERATION METHOD THEREOF

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United States of America Patent

APP PUB NO 20250104784A1
SERIAL NO

18762272

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Abstract

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A data recover read (DRR) operation method of a nonvolatile memory system includes: performing a first read operation on adjacent memory cells, which are connected to an adjacent wordline adjacent to a target wordline, based on a first specific read level; obtaining a cell count value for the adjacent wordline; determining offset values for a normal read level of target memory cells, which are connected to the target wordline, based on the cell count value for the adjacent wordline; and performing a second read operation on the target memory cells, based on the determined offset values and a result of the first read operation.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
KIM, JunHo Suwon-si, KR 56 140
Lee, Heewon Suwon-si, KR 40 367
Lee, Jeongwoo Suwon-si, KR 107 2399
Lee, Kwangwoo Suwon-si, KR 16 89
Yoo, Sangjin Suwon-si, KR 4 2

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