PROGRAMMING OF ANALOG NON-VOLATILE MEMORY CELL IN NEURAL NETWORK

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United States of America Patent

APP PUB NO 20250104783A1
SERIAL NO

18974776

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Abstract

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In one example, a method comprises determining a logarithmic slope factor for a selected analog non-volatile memory cell in an array of analog non-volatile memory cells while the selected analog non-volatile memory cell is operating in a sub-threshold region; storing the logarithmic slope factor; determining a linear slope factor for the selected analog non-volatile memory cell while the selected analog non-volatile memory cell is operating in a linear region; storing the linear slope factor; and utilizing one or more of the logarithmic slope factor and the linear slope factor when programming the selected analog non-volatile memory cell to a target current.

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Patent Owner(s)

Patent OwnerAddress
SILICON STORAGE TECHNOLOGY INC450 HOLGER WAY SAN JOSE CA 95134

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
DO, Nhan Saratoga, US 220 1249
HONG, Stanley San Jose, US 98 237
LEMKE, Steven Boulder Creek, US 53 187
LY, Anh San Jose, US 128 620
NGUYEN, Nha San Jose, US 7 10
TIWARI, Vipin Dublin, US 112 596
Tran, Hieu Van San Jose, US 354 3483
TRINH, Stephen San Jose, US 62 144
VU, Thuan San Jose, US 117 299

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