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Abstract

A memory device includes core dies including memory cell arrays, and a buffer die electrically connected to the core dies through one or more through silicon vias. The buffer die includes a DQS generation circuit that receives an external clock signal from an external device and generates data strobe signals based on the external clock signal for communicating data with the core dies, a DQS calibration circuit that detects a latency of each of plural rank signal that are received from the core dies based on the data strobe signals, respectively, and a coefficient decision circuit that detects a threshold voltage code of the buffer die, applies a weight to the latency of each rank signal based on the threshold voltage code to generate a weighted calibration code for each rank signal, and transmits the weighted calibration codes to respective ones of the core dies.

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