MULTI-FINE PROGRAM SCHEME FOR RELIABILITY RISK WORD LINES
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Jul 26, 2024
filing date -
Jul 26, 2024
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Abstract
In some implementations, a memory device may receive a program command instructing the memory device to program host data to a word line associated with a memory. The memory device may determine a program erase cycle (PEC) count associated with the word line. The memory device may determine, based on the PEC count, a selected program scheme to be used to program the host data to the word line, wherein the selected program scheme is one of a single-fine program scheme or a multi-fine program scheme. The memory device may execute the program command by performing the selected program scheme.
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