VOLTAGE REFERENCE CIRCUIT BASED ON FIELD EFFECT TRANSITORS
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
N/A
Issued Date -
Mar 27, 2025
app pub date -
Jan 4, 2024
filing date -
Jan 4, 2024
priority date (Note) -
Published
status (Latency Note)
Importance
Abstract
An integrated circuit includes a first temperature-sensitive device having a first stacked gate device formed and a second stacked gate device, and a second temperature-sensitive device having a third stacked gate device. The first temperature-sensitive device is configured to generate a first voltage which monotonically increases with an absolute temperature. The second temperature-sensitive device is configured to generate a second voltage which monotonically decreases with the absolute temperature. The integrated circuit also includes an output terminal configured to generate a reference voltage which is based on the first voltage from the first temperature-sensitive device and the second voltage from the second temperature-sensitive device. Each of the first stacked gate device, the second stacked gate device, and the third stacked gate device is formed with a first group of field-effect transistors stacked together.
First Claim
Other Claims data not available
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
- 0 Citation Count
- G05F Class
- 0 % this patent is cited more than
- < 1 Age