Exposure method of semiconductor pattern
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Oct 22, 2023
filing date -
Oct 22, 2023
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Abstract
The invention provides an exposure method of semiconductor patterns, which comprises the following steps: providing a substrate, performing a first exposure step with a first photomask, forming a first pattern in a first region on the substrate, and performing a second exposure step with a second photomask, forming a second pattern in a second region on the substrate, the first pattern and the second pattern are in contact with each other, and at an interface of the first region And the second region, the first pattern and the second pattern are aligned with each other.
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