APPARATUS AND METHODS FOR PERFORMING AN IN-SITU ETCH OF REACTION CHAMBERS WITH FLUORINE-BASED RADICALS
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United States of America Patent
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Mar 27, 2025
app pub date -
Dec 9, 2024
filing date -
Dec 9, 2024
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Abstract
An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.
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