DEPOSITION MASK AND METHOD OF FABRICATING THE SAME
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United States of America Patent
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Mar 27, 2025
app pub date -
Jun 10, 2024
filing date -
Jun 10, 2024
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Abstract
A method of fabricating a deposition mask includes: preparing a silicon on insulator (SOI) substrate including an upper silicon substrate, a lower silicon substrate, and an insulating layer between the upper silicon substrate and the lower silicon substrate; forming a mask membrane having a plurality of openings by patterning the upper silicon substrate; forming a first protective layer on the upper silicon substrate and a second protective layer on the lower silicon substrate; forming a cell opening by patterning the lower silicon substrate; and removing the first protective layer and the second protective layer.
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