POST-CHEMICAL MECHANICAL POLISHING CLEANING COMPOSITION, POST-CHEMICAL MECHANICAL POLISHING AND CLEANING TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE
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United States of America Patent
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Issued Date -
Mar 27, 2025
app pub date -
Aug 20, 2024
filing date -
Aug 20, 2024
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Abstract
Provided is a mechanism capable of further reducing the number of residues remaining on a surface of a polished object to be polished after CMP. A post-chemical mechanical polishing cleaning composition containing the following components (A) and (B), and having a pH of more than 7.0 and 10.0 or less is provided:
- Component (A): a nonionic polymerComponent (B): at least one compound selected from the group consisting of a compound having an amino group and a hydroxyl group, a compound represented by formula (1): H2N[(CH2)xNR1]yR2, and hexamethylenetetramine.
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