MAGNETORESISTIVE EFFECT ELEMENT AND MAGNETIC MEMORY
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United States of America
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Mar 20, 2025
app pub date -
Sep 20, 2023
filing date -
Sep 20, 2023
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Abstract
The magnetic memory of the present disclosure comprises a plurality of magnetoresistive effect elements. Each of the magnetoresistive effect elements comprises a reference layer, a magnetization free layer, a tunnel barrier layer provided between the reference layer and the magnetization free layer, a first cap layer provided on the magnetization free layer, a second cap layer; and a ferromagnetic layer provided between the first cap layer and the second cap layer. The ferromagnetic layer has a thickness less than a thickness of the magnetization free layer.
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