MONOLITHIC INTEGRATION OF VERTICAL ELECTROCHEMICAL TRANSISTORS
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United States of America
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Mar 20, 2025
app pub date -
Sep 18, 2024
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Sep 18, 2024
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Abstract
Vertical organic electrochemical transistors (vOECTs), high-density arrays of the vOECTs, and complementary circuits that incorporate the vOECTs are provided. Also provided are methods of making the vOECTs via micropatterning of redox-active organic semiconductor films by direct electron-beam (e-beam) exposure. In the fabrication methods, highly energetic electrons convert exposed areas of an organic semiconductor into an electronic insulator that retains ionic conductivity, while unexposed areas of the organic semiconductor remain redox-active. This vOECT fabrication approach results in topological continuity between the electrically insulating areas and the redox-active areas of the organic film, which facilitates monolithic integration.
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