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Abstract

Photoelectric conversion apparatus includes semiconductor layer including pixel array region, peripheral region, scribe region, and isolation portion isolating the peripheral region and the scribe region. Each pixel includes avalanche photodiode having first semiconductor region of first conductivity type and second semiconductor region of second conductivity type. The peripheral region includes first region of the first conductivity type and second region of the second conductivity type. The second region and the second semiconductor region are supplied with the same voltage. The scribe region includes third region of the first conductivity type. Wiring structure includes first conductive path connecting the first region and the third region, and voltage supply line supplied with voltage between voltage of the first semiconductor region and voltage of the second semiconductor region. The first region and the voltage supply line are connected by second conductive path.

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First Claim